SIMULASI KUANTUM TRANSISTOR EFEK MEDAN MULTI GERBANG (NWFET)

  • Syamsudin Nur Wahid
https://doi.org/10.35457/quateknika.v7i1.218
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Abstract

Makalah ini membahas metode numerik untuk simulasi kuantum satu dan dua dimensi dari nanowire multigate transistor efek medan. Perangkat dimodelkan berdasarkan teori massa efektif dan formalisme fungsi Green non-ekuilibrium. Simulasi terdiri dari solusi Poisson persamaan tiga dimensi, persamaan Schrodinger dua dimensi pada penampang lintang dan persamaan transport satu dimensi. Dijelaskan detail teknik numerik untuk setiap langkah-langkah simulasi.

References

(n.d.). Retrieved from http://inmmc.org/ftp/material/silicon-electrical.html

Shin, M. (2008). Three-dimensional quantum simulation of multigate nanowire field effect transistor. Mathematics and Computers in Simulation(79), 1060-1070. Retrieved from www.sciencedirect.com

Zeghbroeck, B. J. (1997). Effective mass in semiconductors. Retrieved 11 20, 2013, from http://ecee.colorado.edu/%7Ebart/book/contents.htm

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Published
2017-03-15
How to Cite
Wahid, S. N. (2017). SIMULASI KUANTUM TRANSISTOR EFEK MEDAN MULTI GERBANG (NWFET). Jurnal Qua Teknika, 7(1), 53-64. https://doi.org/10.35457/quateknika.v7i1.218
Issue
Vol. 7 No. 1 (2017): Maret 2017
Section
Articles

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