SIMULASI KUANTUM TRANSISTOR EFEK MEDAN MULTI GERBANG (NWFET)
DOI:
https://doi.org/10.35457/quateknika.v7i1.218Abstract
Makalah ini membahas metode numerik untuk simulasi kuantum satu dan dua dimensi dari nanowire multigate transistor efek medan. Perangkat dimodelkan berdasarkan teori massa efektif dan formalisme fungsi Green non-ekuilibrium. Simulasi terdiri dari solusi Poisson persamaan tiga dimensi, persamaan Schrodinger dua dimensi pada penampang lintang dan persamaan transport satu dimensi. Dijelaskan detail teknik numerik untuk setiap langkah-langkah simulasi.Downloads
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References
(n.d.). Retrieved from http://inmmc.org/ftp/material/silicon-electrical.html
Shin, M. (2008). Three-dimensional quantum simulation of multigate nanowire field effect transistor. Mathematics and Computers in Simulation(79), 1060-1070. Retrieved from www.sciencedirect.com
Zeghbroeck, B. J. (1997). Effective mass in semiconductors. Retrieved 11 20, 2013, from http://ecee.colorado.edu/%7Ebart/book/contents.htm
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2017-03-15
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How to Cite
Wahid, S. N. (2017). SIMULASI KUANTUM TRANSISTOR EFEK MEDAN MULTI GERBANG (NWFET). Jurnal Qua Teknika, 7(1), 53-64. https://doi.org/10.35457/quateknika.v7i1.218
