SIMULASI KUANTUM TRANSISTOR EFEK MEDAN MULTI GERBANG (NWFET)

Authors

  • Syamsudin Nur Wahid

DOI:

https://doi.org/10.35457/quateknika.v7i1.218

Abstract

Makalah ini membahas metode numerik untuk simulasi kuantum satu dan dua dimensi dari nanowire multigate transistor efek medan. Perangkat dimodelkan berdasarkan teori massa efektif dan formalisme fungsi Green non-ekuilibrium. Simulasi terdiri dari solusi Poisson persamaan tiga dimensi, persamaan Schrodinger dua dimensi pada penampang lintang dan persamaan transport satu dimensi. Dijelaskan detail teknik numerik untuk setiap langkah-langkah simulasi.

References

(n.d.). Retrieved from http://inmmc.org/ftp/material/silicon-electrical.html

Shin, M. (2008). Three-dimensional quantum simulation of multigate nanowire field effect transistor. Mathematics and Computers in Simulation(79), 1060-1070. Retrieved from www.sciencedirect.com

Zeghbroeck, B. J. (1997). Effective mass in semiconductors. Retrieved 11 20, 2013, from http://ecee.colorado.edu/%7Ebart/book/contents.htm

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Published

2017-03-15

Issue

Vol. 7 No. 1 (2017): Maret 2017

Section

Articles

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How to Cite

SIMULASI KUANTUM TRANSISTOR EFEK MEDAN MULTI GERBANG (NWFET). (2017). Jurnal Qua Teknika, 7(1), 53-64. https://doi.org/10.35457/quateknika.v7i1.218